MOSFET 76419D 76419 HUF76419D3S TO252 N -Channel

Automotive Engine Computer Vulnerable Repair Chip SMD Transistor Automotive IC

Features

Ultra Low On-Resistance

rDS(ON) = 0.037?, VGS = 10V

rDS(ON) = 0.043?, VGS = 5V

Simulation Models

Temperature Compensated PSPICE® and SABER™

Electrical Models Spice and SABER Thermal Impedance Models Peak Current vs Pulse Width CurveUIS Rating Curve Switching Time vs RGS Curves

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Models : HUF76419D3ST

Manufacturer : Fairchildsemi

Product Categories : Integrated Circuits (ICs)

Package/Case : TO252

Reference To Part : HUF76419D3ST

Substitute : HUF76419D3ST

Package Include :

1 X HUF76419D3ST

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